Complete optical isolation created by indirect interband photonic transitions
Achieving on-chip optical signal isolation is a fundamental difficulty in integrated photonics 1 . The need to overcome this difficulty is becoming increasingly urgent, especially with the emergence of silicon nano-photonics 2 , 3 , 4 , which promises to create on-chip optical systems at an unpreced...
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Published in | Nature photonics Vol. 3; no. 2; pp. 91 - 94 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
London
Nature Publishing Group UK
01.02.2009
Nature Publishing Group |
Subjects | |
Online Access | Get full text |
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Summary: | Achieving on-chip optical signal isolation is a fundamental difficulty in integrated photonics
1
. The need to overcome this difficulty is becoming increasingly urgent, especially with the emergence of silicon nano-photonics
2
,
3
,
4
, which promises to create on-chip optical systems at an unprecedented scale of integration. Until now, there have been no techniques that provide complete on-chip signal isolation using materials or processes that are fundamentally compatible with silicon CMOS processes. Based on the effects of photonic transitions
5
,
6
, we show here that a linear, broadband and non-reciprocal isolation can be accomplished by spatial–temporal refractive index modulations that simultaneously impart frequency and wavevector shifts during the photonic transition process. We further show that a non-reciprocal effect can be accomplished in dynamically modulated micrometre-scale ring-resonator structures. This work demonstrates that on-chip isolation can be accomplished with dynamic photonic structures in standard material systems that are widely used for integrated optoelectronic applications.
The realization of a chip-based, broadband optical isolator is of considerable interest for integrated photonics. To date, no technique has been shown to be able to do this using materials and processes that are CMOS-compatible. Now, scientists propose that the use of direction-dependent photonic mode transitions in silicon nanophotonic structures could be the solution. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 content type line 14 |
ISSN: | 1749-4885 1749-4893 |
DOI: | 10.1038/nphoton.2008.273 |