Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions

We present an evaluation of the safe operating area of a GaAs MESFET and a PHEMT operating under overdrive conditions. The methodology, used to define the limit of the device safe operating area, consists in applying accelerated DC step stresses with bias conditions that can be reached by the Vds an...

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Bibliographic Details
Published inMicroelectronics and reliability Vol. 45; no. 9; pp. 1611 - 1616
Main Authors Ismail, N., Malbert, N., Labat, N., Touboul, A., Muraro, J.L., Brasseau, F., Langrez, D.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Oxford Elsevier Ltd 01.09.2005
Elsevier
Subjects
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
High electron mobility transistor
Electric stress
Durability
Hot electron
Impact ionization
Pseudomorphic transistor
System identification
Life test
Reliability
Metal semiconductor field effect transistor
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Summary:We present an evaluation of the safe operating area of a GaAs MESFET and a PHEMT operating under overdrive conditions. The methodology, used to define the limit of the device safe operating area, consists in applying accelerated DC step stresses with bias conditions that can be reached by the Vds and Vgs sweeps in overdrive operation. The identified parameter drifts of the MESFET are rather less related to hot electron effects than the PHEMT ones as the stress bias conditions correspond to a conduction regime where the impact ionization rate is weaker for the MESFET than for the PHEMT. Specific DC life-tests summarised in this work have allowed to orientate the technology choice for overdrive operating conditions in a satellite mission, preferably towards the MESFET instead of the PHEMT under test.
ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2005.07.080