Property modulation of NiO films grown by radio frequency magnetron sputtering

• Published in: Journal of alloys and compounds Vol. 643; pp. 167 - 173
• Main Authors: Chen, T.F., Wang, A.J., Shang, B.Y., Wu, Z.L., Li, Y.L., Wang, Y.S.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 15.09.2015
• Subjects: Electrical properties; Film growth; Lattice evolution; Magnetron sputtering; NiO films; Partial pressure; Preferential growth mode; Radio frequencies; Scanning electron microscopy; Semiconductors; Silicon substrates; X-rays; NiO films; Lattice evolution; Magnetron sputtering; Electrical properties; Preferential growth mode
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2015.04.139

•Controllable and preferential growth of NiO films were performed successfully on Si substrates.•Oxygen partial pressure lower than 6% is crucial for transformation of the preferential growth.•The film deposition rate is very sensitive to the low oxygen partial pressure.•NiO lattice expands quadratically with the increasing of oxygen partial pressures.•The films contain high concentration of Ni vacancies and show a good rectifying behavior with p-Si. NiO films were grown on Si substrates by radio frequency magnetron sputtering. The films were analyzed by an X-ray diffractometer, scanning electron microscope, X-ray photoelectron spectroscopy and SCS-4200 semiconductor characterization system. Evolution of the growth mode, lattice strain, morphology, chemistry states and electrical properties were investigated systematically. The film deposition rates and properties are very sensitive to the oxygen partial pressure lower than 10%. It is crucial to decrease the oxygen partial pressure to 2% for (111) film growth and the films would transform from (111) to (100) as the oxygen partial pressure increases from 2% to 6%. The film lattice expands quadratically with the increase of oxygen partial pressure. Nickel vacancy concentration in (111) films is much higher than that in (100) films. All (100) films show good rectifying behavior with p-Si. The film growth modes and properties could be modulated flexibly by controlling the oxygen partial pressures.