Synthesis and Microstructural Characterization of SnO2:F Thin Films Deposited by AACVD

• Published in: Materials research (São Carlos, São Paulo, Brazil) Vol. 19; no. suppl 1; pp. 97 - 102
• Main Authors: Chavarría-Castillo, Karen Alejandra, Amézaga-Madrid, Patricia, Esquivel-Pereyra, Oswaldo, Antúnez-Flores, Wilber, Pizá Ruiz, Pedro, Miki-Yoshida, Mario
• Format: Journal Article
• Language: English
• Published: ABM, ABC, ABPol 01.12.2016; Associação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol)
• Subjects: AACVD; ENGINEERING, CHEMICAL; MATERIALS SCIENCE, MULTIDISCIPLINARY; METALLURGY & METALLURGICAL ENGINEERING; SnO2:F (FTO); Solar Cells; Tin oxide films; AACVD; Tin oxide films; Solar Cells; SnO2:F (FTO)
• ISSN: 1516-1439; 1980-5373; 1980-5373
• DOI: 10.1590/1980-5373-mr-2016-0350

In this work, we report the synthesis and microstructural characterization of Tin oxide thin films doped with fluorine for applications such as transparent conductive oxides. Tin oxide doped with fluorine thin films were deposited by aerosol assisted chemical vapor deposition technique onto a borosilicate glass substrate, using a precursor solution of stannic chloride in ethanol and ammonium fluoride as the dopant. Deposition temperature was varied between 623-773 K. Also, other deposition parameters such as concentration of the precursor solution and gas carrier flux were fixed at 0.1 mol∙dm-3 and 5 L min-1 respectively. Results indicate the presence of only the cassiterite phase of Tin oxide in all samples. Thin films obtained were characterized by X-Ray Diffraction. Surface morphology and microstructure were studied by field emission scanning electron microscopy, optical properties of samples were analyzed by total transmittance and reflectance spectra. The resistivity value of the films was measured by the sheet resistance.