Stable Mode-Locked Operation With High Temperature Characteristics of a Two-Section InGaAs/GaAs Double Quantum Wells Laser

• Published in: IEEE access Vol. 9; pp. 16608 - 16614
• Main Authors: Qiao, Zhongliang, Li, Xiang, Sia, Jia Xubrian, Wang, Wanjun, Wang, Hong, Li, Lin, Li, Zaijin, Zhao, Zhibin, Qu, Yi, Gao, Xin, Bo, Baoxue, Liu, Chongyang
• Format: Journal Article
• Language: English
• Published: Piscataway IEEE 2021; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Absorbers; Bias; Electric potential; High temperature; Indium gallium arsenides; Laser mode locking; laser modes; Laser stability; Lasers; Optical pulses; Power lasers; Quantum well lasers; Quantum wells; Semiconductor lasers; Signal to noise ratio; Surface emitting lasers; Temperature distribution; Voltage
• ISSN: 2169-3536; 2169-3536
• DOI: 10.1109/ACCESS.2021.3051179

A monolithic two-section InGaAs/GaAs double quantum wells (DQWs) mode-locked laser (MLL) emitting at <inline-formula> <tex-math notation="LaTeX">1.06~\mu \text{m} </tex-math></inline-formula> is demonstrated. Stable mode locking operation is achieved up to 80 °C. The fundamental repetition rate is at ~9.51 GHz with a signal-to-noise ratio (SNR) of more than 55 dB, and up to the fourth harmonic at ~38.04 GHz is observed. The characteristic temperature (<inline-formula> <tex-math notation="LaTeX">T_{0} </tex-math></inline-formula>) of the laser and the influences of absorber bias voltage on <inline-formula> <tex-math notation="LaTeX">T_{0} </tex-math></inline-formula> have been systematically investigated. From our findings, <inline-formula> <tex-math notation="LaTeX">T_{0} </tex-math></inline-formula> shows a two-segment feature, and is slightly affected by the absorber bias voltage for photon saturation.