Stable Mode-Locked Operation With High Temperature Characteristics of a Two-Section InGaAs/GaAs Double Quantum Wells Laser
A monolithic two-section InGaAs/GaAs double quantum wells (DQWs) mode-locked laser (MLL) emitting at <inline-formula> <tex-math notation="LaTeX">1.06~\mu \text{m} </tex-math></inline-formula> is demonstrated. Stable mode locking operation is achieved up to 80 °C. Th...
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Published in | IEEE access Vol. 9; pp. 16608 - 16614 |
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Main Authors | , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Piscataway
IEEE
2021
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | A monolithic two-section InGaAs/GaAs double quantum wells (DQWs) mode-locked laser (MLL) emitting at <inline-formula> <tex-math notation="LaTeX">1.06~\mu \text{m} </tex-math></inline-formula> is demonstrated. Stable mode locking operation is achieved up to 80 °C. The fundamental repetition rate is at ~9.51 GHz with a signal-to-noise ratio (SNR) of more than 55 dB, and up to the fourth harmonic at ~38.04 GHz is observed. The characteristic temperature (<inline-formula> <tex-math notation="LaTeX">T_{0} </tex-math></inline-formula>) of the laser and the influences of absorber bias voltage on <inline-formula> <tex-math notation="LaTeX">T_{0} </tex-math></inline-formula> have been systematically investigated. From our findings, <inline-formula> <tex-math notation="LaTeX">T_{0} </tex-math></inline-formula> shows a two-segment feature, and is slightly affected by the absorber bias voltage for photon saturation. |
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ISSN: | 2169-3536 2169-3536 |
DOI: | 10.1109/ACCESS.2021.3051179 |