The effect of bias-temperature stress on Na+ incorporation into thin insulating films

The action of Na + incorporation into thin insulating films and transport therein under influence of a bias voltage and temperature (BT stress) is the subject of this work. Deposited onto highly n -doped Si wafers, the insulators get BT stressed and subsequently investigated by means of time-of-flig...

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Published inAnalytical and bioanalytical chemistry Vol. 400; no. 3; pp. 649 - 657
Main Authors Krivec, Stefan, Buchmayr, Michael, Detzel, Thomas, Froemling, Till, Fleig, Juergen, Hutter, Herbert
Format Journal Article
LanguageEnglish
Published Berlin/Heidelberg Springer-Verlag 01.05.2011
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Summary:The action of Na + incorporation into thin insulating films and transport therein under influence of a bias voltage and temperature (BT stress) is the subject of this work. Deposited onto highly n -doped Si wafers, the insulators get BT stressed and subsequently investigated by means of time-of-flight–secondary ion mass spectrometry (ToF-SIMS). A thin PMMA film, spin-coated onto the insulator, serves as host matrix for a defined amount of Na + , provided via sodium triflate. Combining BT stress and ToF-SIMS depth profiling enables the unambiguous detection of Na + , incorporated into the insulating material. The insulators of interest vary in their nitride content: SiO 2 , SiO x N y , and Si 3 N 4 . For SiO 2 , it is shown that once a threshold BT stress is exceeded, Na + gets quantitatively incorporated from PMMA into the underlying insulator, finally accumulating at the SiO 2 /Si interface. A quantitative assessment by combination of Butler–Volmer kinetics with hopping dynamics reveals activation energies of E a  = 1.55 − 2.04 eV for Na + transport in SiO 2 with varying thickness. On the other hand, SiO x N y and Si 3 N 4 films show a different Na + incorporation characteristic in this type of experiment, which can be explained by the higher coordination of nitrogen and hence the reduced Na + permeability within these insulators.
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ISSN:1618-2642
1618-2650
DOI:10.1007/s00216-011-4686-z