The effect of bias-temperature stress on Na+ incorporation into thin insulating films
The action of Na + incorporation into thin insulating films and transport therein under influence of a bias voltage and temperature (BT stress) is the subject of this work. Deposited onto highly n -doped Si wafers, the insulators get BT stressed and subsequently investigated by means of time-of-flig...
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Published in | Analytical and bioanalytical chemistry Vol. 400; no. 3; pp. 649 - 657 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Berlin/Heidelberg
Springer-Verlag
01.05.2011
|
Subjects | |
Online Access | Get full text |
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Summary: | The action of Na
+
incorporation into thin insulating films and transport therein under influence of a bias voltage and temperature (BT stress) is the subject of this work. Deposited onto highly
n
-doped Si wafers, the insulators get BT stressed and subsequently investigated by means of time-of-flight–secondary ion mass spectrometry (ToF-SIMS). A thin PMMA film, spin-coated onto the insulator, serves as host matrix for a defined amount of Na
+
, provided via sodium triflate. Combining BT stress and ToF-SIMS depth profiling enables the unambiguous detection of Na
+
, incorporated into the insulating material. The insulators of interest vary in their nitride content: SiO
2
, SiO
x
N
y
, and Si
3
N
4
. For SiO
2
, it is shown that once a threshold BT stress is exceeded, Na
+
gets quantitatively incorporated from PMMA into the underlying insulator, finally accumulating at the SiO
2
/Si interface. A quantitative assessment by combination of Butler–Volmer kinetics with hopping dynamics reveals activation energies of
E
a
= 1.55 − 2.04 eV for Na
+
transport in SiO
2
with varying thickness. On the other hand, SiO
x
N
y
and Si
3
N
4
films show a different Na
+
incorporation characteristic in this type of experiment, which can be explained by the higher coordination of nitrogen and hence the reduced Na
+
permeability within these insulators. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1618-2642 1618-2650 |
DOI: | 10.1007/s00216-011-4686-z |