Plasma enhanced chemical vapor deposition and characterization of fluorine doped silicon dioxide films

• Published in: Japanese Journal of Applied Physics Vol. 36; no. 1A; pp. 267 - 275
• Main Authors: WOO SIK YOO, SWOPE, R, MORDO, D
• Format: Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 1997
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Stresses; Crystal growth; Inorganic compounds; Refractive index; Fluorine additions; Doped materials; Experimental study; Fabrication property relation; Thin films; CVD; Microelectronic fabrication; Silicon oxides; Permittivity
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.36.267

Fluorine-doped silicon dioxide films were deposited using a dual frequency (DF) multi-station sequential deposition plasma enhanced chemical vapor deposition (PECVD) reactor. Fluorine-doped silicon dioxide films with various Si–F content were deposited using mixture of vaporized tetraethylorthosilicate (TEOS), O 2 and C 2 F 6 . The Si–F content, physical properties and gap filling capability of the F-doped films were characterized. The physical properties and gap filling capability were found to be dependent upon wafer temperature, pressure, gas phase reactant concentrations and rf power, but is predominantly dependent on Si–F content. Aspect ratios (AR) up to 1.64:1 with 0.5 µm spacing were filled with no observable seams and voids.