Experimental and theoretical study on chemically semi-amplified resist AR-P 6200

Experimental and simulation results are presented and discussed on electron-beam lithography (EBL) nano-structuring using the positive chemically semi-amplified electron-beam resist AR-P 6200 (CSAR 62), which provides high sensitivity and allows achievement of high resolutions (sub-100 nm). The infl...

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Bibliographic Details
Published inJournal of physics. Conference series Vol. 992; no. 1; pp. 12057 - 12061
Main Authors Kostic, I, Vutova, K, Andok, R, Barak, V, Bencurova, A, Ritomsky, R, Tanaka, T
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.03.2018
Subjects
Amplification
Electron beam lithography
Electron energy
Physics
Process parameters
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Summary:Experimental and simulation results are presented and discussed on electron-beam lithography (EBL) nano-structuring using the positive chemically semi-amplified electron-beam resist AR-P 6200 (CSAR 62), which provides high sensitivity and allows achievement of high resolutions (sub-100 nm). The influence of the e-beam lithography process parameters, namely, exposure dose, development process conditions, and proximity effects on the obtained developed images was studied for the case of 40-keV electron energy.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/992/1/012057