Experimental and theoretical study on chemically semi-amplified resist AR-P 6200
Experimental and simulation results are presented and discussed on electron-beam lithography (EBL) nano-structuring using the positive chemically semi-amplified electron-beam resist AR-P 6200 (CSAR 62), which provides high sensitivity and allows achievement of high resolutions (sub-100 nm). The infl...
Saved in:
Published in | Journal of physics. Conference series Vol. 992; no. 1; pp. 12057 - 12061 |
---|---|
Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
Bristol
IOP Publishing
01.03.2018
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | Experimental and simulation results are presented and discussed on electron-beam lithography (EBL) nano-structuring using the positive chemically semi-amplified electron-beam resist AR-P 6200 (CSAR 62), which provides high sensitivity and allows achievement of high resolutions (sub-100 nm). The influence of the e-beam lithography process parameters, namely, exposure dose, development process conditions, and proximity effects on the obtained developed images was studied for the case of 40-keV electron energy. |
---|---|
ISSN: | 1742-6588 1742-6596 |
DOI: | 10.1088/1742-6596/992/1/012057 |