Study for the non-contact characterization of metallization ageing of power electronic semiconductor devices using the eddy current technique

• Published in: Microelectronics and reliability Vol. 51; no. 6; pp. 1127 - 1135
• Main Authors: Nguyen, T.A., Joubert, P.-Y., Lefebvre, S., Chaplier, G., Rousseau, L.
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier Ltd 01.06.2011; Elsevier
• Subjects: Aging; Applied sciences; Devices; Eddy currents; Electrical engineering. Electrical power engineering; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; Exact sciences and technology; Failure; Metallizing; Microelectronic fabrication (materials and surfaces technology); Monitors; Power electronics, power supplies; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Semiconductors; Die; Microelectronic fabrication; Current sensor; Monitor; Ageing; Power device; Metallizing; Power electronics; Eddy current; Failures; Damaging; Non contact measurement
• ISSN: 0026-2714; 1872-941X
• DOI: 10.1016/j.microrel.2011.02.002

The ageing of the metallization layers of power semiconductor dies may be the cause of failure of power semiconductor modules. Usual indicators of failure like on-state voltage drops make it difficult to highlight the deterioration of the metallization layer. In this study, we evaluate the relevance of the characterization of power device metallizations by means of the eddy current sensors. Experimental results show the ability to monitor the state and the evolution of the metallization ageing with such a technique.