Synthesis and characterization of thin amorphous carbon films doped with nitrogen on (001) Si substrates

We synthesized undoped as well as up to 6 at.% nitrogen (N) doped thin amorphous carbon (α-C) films by plasma- enhanced chemical vapor deposition (PECVD) method. The source of carbon/carbon containing radicals was benzene (C6H6) in Ar gas- mixture. The obtained thin films were studied by optical mic...

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Bibliographic Details
Published inJournal of physics. Conference series Vol. 764; no. 1; pp. 12013 - 12018
Main Authors Balchev, I, Tzvetkova, Kr, Kolev, S, Terziiska, P, Szekeres, A, Miloushev, I, Tenev, T, Antonova, K, Peyeva, R, Ivanova, T, Avramova, I, Tzvetkov, M, Avdreev, G, Valcheva, E, Milenov, T, Tinchev, S
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.10.2016
Subjects
Benzene
Carbon
Chemical vapor deposition
Ellipsometry
Nitrogen
Optical microscopy
Photoelectrons
Physics
Silicon substrates
Thickness
Thin films
X ray photoelectron spectroscopy
X ray powder diffraction
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Summary:We synthesized undoped as well as up to 6 at.% nitrogen (N) doped thin amorphous carbon (α-C) films by plasma- enhanced chemical vapor deposition (PECVD) method. The source of carbon/carbon containing radicals was benzene (C6H6) in Ar gas- mixture. The obtained thin films were studied by optical microscopy, X-ray powder diffraction, UV-VIS- NIR Spectral Ellipsometry, IR and Raman spectroscopic studies as well as by X-ray photoelectron spectroscopies (XPS). We established by XPS that the deposited layers consist of a mix of sp2 and sp3 hybridized carbon. The films are amorphous as it was shown by the measured XRD patterns. The ellipsometric measurements enabled calculation of transition energies and the complex results showed that films with thickness of 15- 120 nm and different properties can be obtained by this technique.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/764/1/012013