Measurement of silicon and GaAs/Ge solar cell device parameters

• Published in: Solar energy materials and solar cells Vol. 89; no. 4; pp. 403 - 408
• Main Authors: Deshmukh, M.P., Nagaraju, J.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.12.2005; Elsevier
• Subjects: Applied sciences; Device parameters; Energy; Exact sciences and technology; Natural energy; Photovoltaic conversion; Si and GaAs/Ge solar cells; Solar cells. Photoelectrochemical cells; Solar energy; Temperature; Device parameters; Temperature; Si and GaAs/Ge solar cells; Measurement; Silicon solar cells; Voltage current curve; Doping; Open circuit voltage; Gallium arsenide solar cells; Solar cell; Bias voltage; Carrier lifetime; Capacitance
• ISSN: 0927-0248; 1879-3398
• DOI: 10.1016/j.solmat.2005.01.005

The device parameters (carrier lifetime, ideality factor), and physical parameters (built-in voltage, doping concentration) of silicon (Si) and gallium arsenide (GaAs/Ge) solar cells are measured at different temperatures using time domain technique. Carrier lifetime is calculated from open circuit voltage decay (OCVD). Built-in voltage and doping concentration are derived from the cell capacitance measured at different bias voltages. Ideality factor is derived from the I– V characteristics of solar cell. Carrier lifetime increases while built-in voltage decreases with increase in temperature. Ideality factor of the solar cell decreases with temperature.