MBE fabrication of III-N-based laser diodes and its development to industrial system

• Published in: Journal of crystal growth Vol. 378; pp. 278 - 282
• Main Authors: Skierbiszewski, C., Siekacz, M., Turski, H., Muziol, G., Sawicka, M., Perlin, P., Wasilewski, Z.R., Porowski, S.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.09.2013; Elsevier
• Subjects: A3. Molecular beam epitaxy; B1. Nitrides; B3. Laser diodes; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Defects and impurities in crystals; microstructure; Density; Exact sciences and technology; Flux; Gallium nitrides; Growth from melts; zone melting and refining; Indium gallium nitrides; Laser diodes; Lasing; Linear defects: dislocations, disclinations; Materials science; Methods of crystal growth; physics of crystal growth; Methods of deposition of films and coatings; film growth and epitaxy; Molecular beam epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Nitrides; Physics; Structure of solids and liquids; crystallography; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation; A3. Molecular beam epitaxy; B3. Laser diodes; B1. Nitrides; Flux growth; Output power; Plasma assisted processing; Laser diodes; Gallium nitride; III-V compound; Dislocation density; Lifetime; Continuous wave; Semiconductor lasers; Threading dislocation; Growth mechanism; Molecular beam epitaxy; Waveguides; Quantum well lasers; Indium nitride; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2012.12.116

We present recent progress in the growth of nitride based laser diodes (LDs) made by Plasma Assisted Molecular Beam Epitaxy (PAMBE). In this work we demonstrate continuous wave (cw) LDs grown by PAMBE operating in the range 430–460nm. The LDs were grown on c-plane bulk GaN substrates with threading dislocation densities (TDDs) ranging from 103cm−2 to 107cm−2. The low TDDs allowed fabrication of cw LDs with the lifetime exceeding 2000h at 10mW of optical output power. The maximum output power for these LDs was 80mW. We used AlGaN cladding-free design of LDs with InGaN waveguides. The key element to achieve lasing for wavelengths above 450nm was substantial increase of the nitrogen flux available for growth in PAMBE. The increase of N flux is beneficial for growth of efficient InGaN QWs, which allowed demonstration of optically pumped lasing from single quantum well InGaN laser structures at 501nm. ► True-blue InAlGaN laser diodes by plasma assisted molecular beam epitaxy. ► LDs operate at 450 – 460 nm in cw mode with optical output power up to 80 mW. ► The role of active nitrogen for growth of InGaN is investigated.