Electrical properties of titanium nitride films synthesized by reactive magnetron sputtering

Reactive dc magnetron sputtering was employed to produce thin films of titanium nitride using titanium metallic target, argon as the plasma gas and nitrogen as the reactive gas. A set of the films was studied deposited on the Si, fused silica and crystalline (001) MgO substrates with various deposit...

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Published inJournal of physics. Conference series Vol. 927; no. 1; pp. 12036 - 12040
Main Authors Mohammed, W M, Gumarov, A I, Vakhitov, I R, Yanilkin, I V, Kiiamov, A G, Kharintsev, S S, Nikitin, S I, Tagirov, L R, Yusupov, R V
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.11.2017
Subjects
Argon
Electrical properties
Fused silica
Magnesium oxide
Magnetic properties
Magnetron sputtering
Physics
Silicon dioxide
Silicon substrates
Thin films
Titanium
Titanium nitride
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Summary:Reactive dc magnetron sputtering was employed to produce thin films of titanium nitride using titanium metallic target, argon as the plasma gas and nitrogen as the reactive gas. A set of the films was studied deposited on the Si, fused silica and crystalline (001) MgO substrates with various deposition conditions. The films deposited on the Si and SiO2 substrates are polycrystalline while deposited at slow rate to the heated to 600°C MgO substrate are highly epitaxial according both to XRD and LEED data. Electrical resistivity of the films was measured by means of the four-probe van der Pauw method.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/927/1/012036