Dipolar electron-hole liquid in a double-well SiGe/Si heterosystem

The transition from a dipolar to a spatially direct electron-hole liquid in two-dimensional layers of a type-II (buffer Si1-yGey)/tSi/sSi1-xGex/tSi/(cap Si1-yGey) heterostructure is investigated by photoluminescence spectroscopy at liquid-helium temperatures at high excitation levels. The transition...

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Bibliographic Details
Published inJournal of physics. Conference series Vol. 816; no. 1; pp. 12016 - 12021
Main Authors Akmaev, M A, Burbaev, T M
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.03.2017
Subjects
Conduction bands
Electrons
Excitons
Heterostructures
Holes (electron deficiencies)
Photoluminescence
Physics
Quantum wells
Valence band
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Summary:The transition from a dipolar to a spatially direct electron-hole liquid in two-dimensional layers of a type-II (buffer Si1-yGey)/tSi/sSi1-xGex/tSi/(cap Si1-yGey) heterostructure is investigated by photoluminescence spectroscopy at liquid-helium temperatures at high excitation levels. The transition takes place upon a reduction of the thickness of the sSi1-xGex layer, which forms a quantum well for holes in the valence band and a barrier in the conduction band separating the electron quantum wells (tSi layers). The main characteristics of both types of electron-hole liquid are determined. The lifetime of dipolar excitons is determined from photoluminescence kinetics measurements.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/816/1/012016