Effects of multi-defects at metal/semiconductor interfaces on electrical properties and their influence on stability and lifetime of thin film solar cells

• Published in: Solar energy materials and solar cells Vol. 86; no. 3; pp. 373 - 384
• Main Authors: Dharmadasa, I.M., Bunning, J.D., Samantilleke, A.P., Shen, T.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 31.03.2005; Elsevier
• Subjects: Applied sciences; CdTe solar cells; Cu(InGa)(SeS) 2 solar cells; Energy; Exact sciences and technology; Fermi level pinning; Metal/CdTe interfaces; Natural energy; Photovoltaic conversion; Solar cells. Photoelectrochemical cells; Solar energy; Stability of solar cells; Stability of solar cells; Metal/CdTe interfaces; CdTe solar cells; Cu(InGa)(SeS) 2 solar cells; Fermi level pinning; Stability; Voltage current curve; Electrical properties; Direction; Solar cell; Interface properties; Lifetime; Fermi level; Thin film cell; Cu(InGa)(SeS)2 solar cells; Solar energy; Defect
• ISSN: 0927-0248; 1879-3398
• DOI: 10.1016/j.solmat.2004.08.009

This communication analyses some of the results observed for metal/n-CdTe interfaces in the mid-1980s, which could not be interpreted at that time. These observations are analysed on the basis of new understanding using a new model proposed for CdS/CdTe thin film solar cells. The observed behaviour of current–voltage characteristics of electrical contacts to n-CdTe under electrical and illumination stresses are explained and the effects of these changes on CdS/CdTe solar cells are discussed. Future research directions for the development of CdS/CdTe solar cells are proposed and the way forward for improvement of stability and lifetime of solar cells is suggested. A summary of recent electrical contact work on metal/Cu(InGa)(SSe) 2 interfaces is also presented and similar behaviour is reported.