Phase conjugation in weakly piezoelectric magnetized semiconductor-plasmas

• Published in: Journal of modern optics Vol. 55; no. 6; pp. 931 - 945
• Main Authors: Aghamkar, P., Singh, M.
• Format: Journal Article
• Language: English
• Published: London Taylor & Francis Group 20.03.2008; Taylor & Francis
• Subjects: Exact sciences and technology; Fundamental areas of phenomenology (including applications); III-V semiconductors; Magnetized plasmas; Nonlinear optics; optical phase conjugation; Optics; Phase conjugation, optical mixing; photorefractive and kerr effects; Physics; Physics of gases, plasmas and electric discharges; Physics of plasmas and electric discharges; Plasma properties; reflectivity; Stimulated brillouin and rayleigh scattering; stimulated Brillouin scattering; threshold; High-power lasers; Stimulated scattering; Magnetized plasma; Theoretical study; Piezoelectric semiconductors; Optical waveguides; Phase conjugation; Reflectivity; Stimulated Brillouin scattering; Quantity ratio; Piezoelectric materials; n type semiconductor; Optical phase conjugation; Gas lasers; Nonlinear optics; Optical attenuation; ns range; Carbon dioxide lasers; III-V semiconductors
• ISSN: 0950-0340; 1362-3044
• DOI: 10.1080/09500340701534865

The occurrence of optical phase conjugation via stimulated Brillouin scattering (OPC-SBS) in weakly piezoelectric III-V semiconductor plasmas subjected to a large magnetostatic field under off-resonant transition regime has been explored theoretically. The reflectivity of the phase conjugate wave is dependent upon the Brillouin susceptibility and can be significantly enhanced through n-type doping of the crystal and the simultaneous application of a magnetostatic field. Moreover, the threshold pump intensity required for the occurrence of SBS in the crystal with finite optical attenuation can be considerably diminished through proper selection of the doping concentration and magnetostatic field. Consequently, OPC-SBS becomes a possible tool in phase-conjugate optics even under not-too-high power laser excitation by using doped n-type semiconductors kept under the influence of a large magnetostatic field. Numerical estimates made for n-InSb crystal at 77 K duly irradiated by a nanosecond pulsed 10.6 µm CO 2 laser reveal that high OPC-SBS reflectivity can be achieved at excitation intensities below the optical damage threshold if the semiconductor crystal is used as an optical waveguide with an interaction length of a few millimetres.