Spectroscopic characterization of nitrogen- and boron-doped graphene layers

Nitrogen- and boron-doped graphene layers were grown on copper substrates by alcoholic chemical vapor deposition and characterized by Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and electrical transport measurements. The growth of high-quality monolayer graphene was confirmed by micr...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 54; no. 11; pp. 115101 - 115105
Main Authors Kamoi, Susumu, Kim, Jung Gon, Hasuike, Noriyuki, Kisoda, Kenji, Harima, Hiroshi
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.11.2015
Subjects
Chemical vapor deposition
Doping
Frequency shift
Graphene
Impurities
Spectroscopy
Transport
X-ray photoelectron spectroscopy
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Summary:Nitrogen- and boron-doped graphene layers were grown on copper substrates by alcoholic chemical vapor deposition and characterized by Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and electrical transport measurements. The growth of high-quality monolayer graphene was confirmed by micro-Raman spectroscopy. The G and 2D peaks showed systematic frequency shift and broadening with the impurity concentration. The G peaks showed Fano-like asymmetric line shapes. These behaviors suggested the generation of free carriers by doping. XPS and electrical transport measurements also supported the systematic incorporation of impurities in graphene layers.
Bibliography:ObjectType-Article-1
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.54.115101