Etchant-free and damageless transfer of monolayer and bilayer graphene grown on SiC

Monolayer and bilayer graphene grown on SiC can be transferred without the need for chemical etchants by using, instead of metal, a water-soluble polymer as a supporting layer for handling graphene during the transfer. Thus, possible unintentional doping by chemical etchants can be avoided. The resu...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 53; no. 11; pp. 115101 - 1-115101-4
Main Authors Tanabe, Shinichi, Furukawa, Kazuaki, Hibino, Hiroki
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.11.2014
Subjects
Damage
Doping
Etchants
Etching
Graphene
Handling
Monolayers
Raman spectroscopy
Silicon carbide
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Summary:Monolayer and bilayer graphene grown on SiC can be transferred without the need for chemical etchants by using, instead of metal, a water-soluble polymer as a supporting layer for handling graphene during the transfer. Thus, possible unintentional doping by chemical etchants can be avoided. The results of Raman spectroscopy show no significant damage in the transferred monolayer and bilayer graphene. The mobility of the transferred monolayer graphene exceeds 2200 cm2 V−1 s−1 at room temperature, which is comparable to that before the transfer. These results indicate that the etchant-free method achieves damageless transfer of monolayer and bilayer graphene.
Bibliography:ObjectType-Article-1
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.53.115101