Comparison of radiation damage in silicon induced by proton and neutron irradiation
The subject of radiation damage to Si detectors induced by 24-GeV/c protons and nuclear reactor neutrons has been studied. Detectors fabricated on single-crystal silicon enriched with various impurities have been tested. Significant differences in electrically active defects have been found between...
Saved in:
| Published in | IEEE transactions on nuclear science Vol. 46; no. 5; pp. 1310 - 1313 |
|---|---|
| Main Authors | , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
United States
IEEE
01.10.1999
|
| Subjects | |
| Online Access | Get full text |
| ISSN | 0018-9499 1558-1578 |
| DOI | 10.1109/23.795808 |
Cover
| Abstract | The subject of radiation damage to Si detectors induced by 24-GeV/c protons and nuclear reactor neutrons has been studied. Detectors fabricated on single-crystal silicon enriched with various impurities have been tested. Significant differences in electrically active defects have been found between the various types of material. The results of the study suggest for the first time that the widely used nonionizing energy loss (NIEL) factors are insufficient for normalization of the electrically active damage in case of oxygen- and carbon-enriched silicon detectors. It has been found that a deliberate introduction of impurities into the semiconductor can affect the radiation hardness of silicon detectors. |
|---|---|
| AbstractList | The subject of radiation damage to Si detectors induced by 24-GeV/c protons and nuclear reactor neutrons has been studied. Detectors fabricated on single-crystal silicon enriched with various impurities have been tested. Significant differences in electrically active defects have been found between the various types of material. The results of the study suggest for the first time that the widely used nonionizing energy loss (NIEL) factors are insufficient for normalization of the electrically active damage in case of oxygen- and carbon-enriched silicon detectors. It has been found that a deliberate introduction of impurities into the semiconductor can affect the radiation hardness of silicon detectors The subject of radiation damage to Si detectors induced by 24-GeV/c protons and nuclear reactor neutrons has been studied. Detectors fabricated on single-crystal silicon enriched with various impurities have been tested. Significant differences in electrically active defects have been found between the various types of material. The results of the study suggest for the first time that the widely used nonionizing energy loss (NIEL) factors are insufficient for normalization of the electrically active damage in case of oxygen- and carbon-enriched silicon detectors. It has been found that a deliberate introduction of impurities into the semiconductor can affect the radiation hardness of silicon detectors. The subject of radiation damage to silicon detectors induced by 24-GeV/c protons and nuclear reactor neutrons has been studied. Detectors fabricated on single-crystal silicon enriched with various impurities have been tested. Significant differences in electrically active defects have been found between the various types of material. The results of the study suggest for the first time that the widely used nonionizing energy loss (NIEL) factors are insufficient for normalization of the electrically active damage in case of oxygen- and carbon-enriched silicon detectors. It has been found that a deliberate introduction of impurities into the semiconductor can affect the radiation hardness of silicon detectors. |
| Author | Zanet, A. Ruzin, A. Glaser, M. Watts, S. Casse, G. Lemeilleur, F. |
| Author_xml | – sequence: 1 givenname: A. surname: Ruzin fullname: Ruzin, A. organization: EP Div., CERN, Geneva, Switzerland – sequence: 2 givenname: G. surname: Casse fullname: Casse, G. – sequence: 3 givenname: M. surname: Glaser fullname: Glaser, M. – sequence: 4 givenname: A. surname: Zanet fullname: Zanet, A. – sequence: 5 givenname: F. surname: Lemeilleur fullname: Lemeilleur, F. – sequence: 6 givenname: S. surname: Watts fullname: Watts, S. |
| BackLink | https://www.osti.gov/biblio/20000605$$D View this record in Osti.gov |
| BookMark | eNp9kU1LAzEQhoNUsFUPXj0tCIqHbZPdzW5ylOIXCB7Uc5hmJxrZZmuSHvrvTd3Sg4hzGWbmeeeDmZCR6x0ScsbolDEqZ0U5bSQXVByQMeNc5Iw3YkTGlDKRy0rKIzIJ4TOFFad8TF7m_XIF3obeZb3JPLQWok1BC0t4x8y6LNjO6pSxrl1rbLPFJlv5PqYMuDZzuI5-W_V77Qk5NNAFPN35Y_J2d_s6f8ifnu8f5zdPua5oE3PAUmoEqUVdF1rTRWHKQhojdN0ANJxxbAxiK4AzU-vaAOoKGTZQLTgaUx6Ti6FvH6JVQduI-iNt6lBHVdBkNeWJuhqotPTXGkNUSxs0dh047NdBSSZlwQSjibz8lywEkzUtmwTOBlD7PgSPRqXZP6dHD7ZTjKrtM1RRquEZSXH9S7Hydgl-8yd7PrAWEffcrvgNmgiU-Q |
| CODEN | IETNAE |
| CitedBy_id | crossref_primary_10_1016_j_nima_2007_05_264 crossref_primary_10_1109_TNS_2003_814573 crossref_primary_10_1016_S0168_9002_02_00263_2 crossref_primary_10_1063_1_3072672 crossref_primary_10_1016_j_sse_2004_03_018 crossref_primary_10_1109_TNS_2002_1039681 crossref_primary_10_1016_S0168_9002_00_01216_X crossref_primary_10_1016_S1003_6326_06_60161_1 crossref_primary_10_1109_23_958717 crossref_primary_10_1109_TASC_2019_2907685 crossref_primary_10_1088_1748_0221_10_08_P08005 crossref_primary_10_1016_j_mssp_2007_11_006 crossref_primary_10_1016_j_nimb_2020_05_012 crossref_primary_10_1080_00295450_2024_2403887 crossref_primary_10_1016_j_nima_2006_11_065 crossref_primary_10_1109_TNS_2004_839643 crossref_primary_10_1016_j_nima_2003_08_084 crossref_primary_10_1016_S0168_583X_01_00886_2 crossref_primary_10_1109_23_960351 crossref_primary_10_1016_j_nima_2010_04_089 crossref_primary_10_1016_S0168_9002_02_01369_4 crossref_primary_10_1063_1_4922530 crossref_primary_10_1109_TNS_2002_803923 crossref_primary_10_1039_C9SE00102F crossref_primary_10_1109_23_958706 crossref_primary_10_7498_aps_71_20211722 crossref_primary_10_1016_j_nima_2005_06_001 crossref_primary_10_1016_j_actaastro_2021_06_012 crossref_primary_10_1016_j_nima_2003_08_079 crossref_primary_10_1016_S0969_806X_01_00207_9 crossref_primary_10_1016_j_nima_2007_08_198 crossref_primary_10_1109_23_983206 crossref_primary_10_1016_j_rinp_2019_102399 crossref_primary_10_1016_S0168_583X_01_00729_7 crossref_primary_10_21597_jist_924356 crossref_primary_10_1016_j_nima_2006_05_201 crossref_primary_10_1016_j_nima_2009_08_017 crossref_primary_10_1109_23_983182 crossref_primary_10_1209_0295_5075_121_68002 crossref_primary_10_1002_pssc_200404847 crossref_primary_10_1016_j_radphyschem_2004_04_070 crossref_primary_10_1016_j_nima_2009_09_065 crossref_primary_10_1088_1361_6641_ab74ea crossref_primary_10_1002_pssa_201900309 crossref_primary_10_1051_epjap_2003073_1 crossref_primary_10_3390_s19081767 crossref_primary_10_1016_j_nima_2009_08_021 crossref_primary_10_1109_23_903792 crossref_primary_10_1109_TNS_2006_873216 crossref_primary_10_1109_TNS_2004_835064 crossref_primary_10_1016_j_nima_2005_06_019 crossref_primary_10_1016_S0168_9002_02_00544_2 crossref_primary_10_1016_j_nimb_2010_06_013 crossref_primary_10_1016_S0168_9002_01_00560_5 crossref_primary_10_1016_j_nima_2007_07_023 crossref_primary_10_1109_TNS_2003_820762 crossref_primary_10_2139_ssrn_4060898 crossref_primary_10_1016_S0168_9002_01_01640_0 crossref_primary_10_1016_j_ppnp_2008_12_002 crossref_primary_10_1016_j_rinp_2022_105574 crossref_primary_10_1109_TNS_2002_1039609 crossref_primary_10_1016_j_nima_2006_05_208 crossref_primary_10_1016_S0168_9002_00_00572_6 |
| Cites_doi | 10.1016/0168-9002(96)37410-X 10.1016/S0168-9002(97)00003-X 10.1109/TNS.1987.4337442 10.1016/1350-4487(94)00093-G 10.1063/1.365790 10.1109/23.273529 10.1016/S0168-9002(98)81148-0 10.1016/S0920-5632(99)00618-0 10.1109/23.510747 10.1016/0168-9002(94)91417-6 10.1109/TNS.1986.4334592 |
| ContentType | Journal Article |
| CorporateAuthor | CERN, Geneva (CH) |
| CorporateAuthor_xml | – name: CERN, Geneva (CH) |
| DBID | RIA RIE AAYXX CITATION 7U5 8FD L7M 7SP F28 FR3 OTOTI |
| DOI | 10.1109/23.795808 |
| DatabaseName | IEEE All-Society Periodicals Package (ASPP) 1998–Present IEEE Electronic Library (IEL) CrossRef Solid State and Superconductivity Abstracts Technology Research Database Advanced Technologies Database with Aerospace Electronics & Communications Abstracts ANTE: Abstracts in New Technology & Engineering Engineering Research Database OSTI.GOV |
| DatabaseTitle | CrossRef Technology Research Database Advanced Technologies Database with Aerospace Solid State and Superconductivity Abstracts Engineering Research Database ANTE: Abstracts in New Technology & Engineering Electronics & Communications Abstracts |
| DatabaseTitleList | Solid State and Superconductivity Abstracts Technology Research Database |
| Database_xml | – sequence: 1 dbid: RIE name: IEEE Electronic Library (IEL) url: https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/ sourceTypes: Publisher |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering |
| EISSN | 1558-1578 |
| EndPage | 1313 |
| ExternalDocumentID | 20000605 10_1109_23_795808 795808 |
| Genre | orig-research |
| GroupedDBID | .DC .GJ 0R~ 29I 3O- 4.4 53G 5GY 5RE 5VS 6IK 8WZ 97E A6W AAJGR AARMG AASAJ AAWTH ABAZT ABQJQ ABVLG ACGFO ACGFS ACIWK ACNCT ACPRK AENEX AETEA AETIX AFRAH AGQYO AGSQL AHBIQ AI. AIBXA AKJIK AKQYR ALLEH ALMA_UNASSIGNED_HOLDINGS ASUFR ATWAV BEFXN BFFAM BGNUA BKEBE BPEOZ CS3 DU5 EBS EJD F5P HZ~ H~9 IAAWW IBMZZ ICLAB IDIHD IFIPE IFJZH IPLJI JAVBF LAI M43 MS~ O9- OCL P2P RIA RIE RNS TAE TN5 VH1 VOH AAYXX CITATION RIG 7U5 8FD L7M 7SP F28 FR3 OTOTI |
| ID | FETCH-LOGICAL-c407t-ae39cea9c8662cc0b2f329ff8c67aa7515e7feed8a51f6c6faec4e1e7a4b5eff3 |
| IEDL.DBID | RIE |
| ISSN | 0018-9499 |
| IngestDate | Thu Apr 10 09:24:48 EDT 2025 Thu Sep 04 18:02:53 EDT 2025 Thu Sep 04 19:55:08 EDT 2025 Tue Jul 01 02:57:08 EDT 2025 Thu Apr 24 22:51:57 EDT 2025 Wed Aug 27 02:29:32 EDT 2025 |
| IsDoiOpenAccess | false |
| IsOpenAccess | true |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 5 |
| Language | English |
| License | https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-LOGICAL-c407t-ae39cea9c8662cc0b2f329ff8c67aa7515e7feed8a51f6c6faec4e1e7a4b5eff3 |
| Notes | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
| OpenAccessLink | http://cds.cern.ch/record/410789/files/cer-000338169.pdf |
| PQID | 28196037 |
| PQPubID | 23500 |
| PageCount | 4 |
| ParticipantIDs | proquest_miscellaneous_919921810 proquest_miscellaneous_28196037 ieee_primary_795808 osti_scitechconnect_20000605 crossref_citationtrail_10_1109_23_795808 crossref_primary_10_1109_23_795808 |
| ProviderPackageCode | CITATION AAYXX |
| PublicationCentury | 1900 |
| PublicationDate | 1999-10-01 |
| PublicationDateYYYYMMDD | 1999-10-01 |
| PublicationDate_xml | – month: 10 year: 1999 text: 1999-10-01 day: 01 |
| PublicationDecade | 1990 |
| PublicationPlace | United States |
| PublicationPlace_xml | – name: United States |
| PublicationTitle | IEEE transactions on nuclear science |
| PublicationTitleAbbrev | TNS |
| PublicationYear | 1999 |
| Publisher | IEEE |
| Publisher_xml | – name: IEEE |
| References | ref15 nossarzewska-orlowska (ref12) 1998 cindro (ref10) 1998; a sopko (ref14) 0 (ref13) 0 (ref11) 0 ref1 ref16 ref8 ref7 van ginneken (ref4) 1989 ref9 ref3 ref6 ref5 moll (ref2) 1997; a |
| References_xml | – ident: ref1 doi: 10.1016/0168-9002(96)37410-X – volume: a start-page: 335 year: 1997 ident: ref2 article-title: comparison of defects produced by fast neutrons and $^{60}$co-gammas in high resistivity silicon detectors using deep-level transient spectroscopy publication-title: Nucl Instrum Methods doi: 10.1016/S0168-9002(97)00003-X – ident: ref6 doi: 10.1109/TNS.1987.4337442 – ident: ref9 doi: 10.1016/1350-4487(94)00093-G – ident: ref3 doi: 10.1063/1.365790 – year: 0 ident: ref11 – ident: ref8 doi: 10.1109/23.273529 – volume: a start-page: 132 year: 1998 ident: ref10 article-title: bias-dependent annealing of radiation damage in neutron-irradiated silicon p+−n−n+ diodes publication-title: Nucl Instrum Methods doi: 10.1016/S0168-9002(98)81148-0 – year: 0 ident: ref13 publication-title: EVANS EUROPA – ident: ref15 doi: 10.1016/S0920-5632(99)00618-0 – ident: ref16 doi: 10.1109/23.510747 – year: 1989 ident: ref4 publication-title: Nonionizing energy deposition in silicon for radiation damage studies – ident: ref7 doi: 10.1016/0168-9002(94)91417-6 – year: 1998 ident: ref12 article-title: characterization of itme silicon for detectors publication-title: 3rd ROSE Workshop DESY-Proc -1998-02 – year: 0 ident: ref14 – ident: ref5 doi: 10.1109/TNS.1986.4334592 |
| SSID | ssj0014505 |
| Score | 1.8499684 |
| Snippet | The subject of radiation damage to Si detectors induced by 24-GeV/c protons and nuclear reactor neutrons has been studied. Detectors fabricated on... The subject of radiation damage to silicon detectors induced by 24-GeV/c protons and nuclear reactor neutrons has been studied. Detectors fabricated on... |
| SourceID | osti proquest crossref ieee |
| SourceType | Open Access Repository Aggregation Database Enrichment Source Index Database Publisher |
| StartPage | 1310 |
| SubjectTerms | COMPARATIVE EVALUATIONS CRYSTAL DEFECTS Detectors Energy (nuclear) Energy loss Energy use IMPURITIES INSTRUMENTATION Leakage current MATERIALS SCIENCE NEUTRONS PHYSICAL RADIATION EFFECTS Predictive models PROTONS Radiation damage Radiation detectors Radiation hardness Semiconductor radiation detectors Semiconductors SI SEMICONDUCTOR DETECTORS SILICON Silicon radiation detectors Space charge Voltage |
| Title | Comparison of radiation damage in silicon induced by proton and neutron irradiation |
| URI | https://ieeexplore.ieee.org/document/795808 https://www.proquest.com/docview/28196037 https://www.proquest.com/docview/919921810 https://www.osti.gov/biblio/20000605 |
| Volume | 46 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV3NT90wDI8YJzgMeID2-Fo07cCljzZt0_SIEOhp0nbZkLhVqetIT2Mteq89bH89dtpX8TWJU6PIUSrbSZzY_lmIr8ahq0zJUeI6CRJ0tKSUjYLSpEaDq8BaTnD-_kPPb5Nvd-ndgLPtc2EQ0Qef4Yyb3pdfNdDxU9lFlqeGE3s_kJb1qVqjwyBJw6FYAU1GVvwAIhSF-YWKZ_3AZ0ePr6VCn4ZW0qt92B8uNzt91vbKYxJyTMnvWdeWM_j3ArHxnf-9Kz4ORqa87LViT2xgPRHbT6AH98XPq7EAoWycXDJEActIVvYPbTFyUcvV4p7UpKZmRfKvZPlXMqoD9di6kjV2_IouF8tx7IG4vbn-dTUPhgILAdA9rg0sxjmgzcForQDCUrlY5c4Z0Jm1GZk6mDk6RI1NI6dBO4uQYISZTcoUnYsPxWbd1PhJSF1aFRpUGcZ0QVE6BxeB1pjEyqU0dirO17wvYEAf5yIY94W_hYR5oeKi59NUfBlJH3rIjbeIJsznkWDde8LyLMh6YAhc4FghaLnUJuPOpFPxeS3nglYRu0ZsjU23KtidqMM4mwr5H4qc43TJHAqP3pz5WGx5QAcf5nciNttlh6dkrrTlmVfURxgU60I |
| linkProvider | IEEE |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV3Nb9UwDI_QOAwOwDYQDzYWTRx26VubNml6RNOmB_u4sEm7VanrSE-MFr3XHuCvx077Kj6GxKlR5CiV48RObP8sxHvr0de24ihxk0UZetpSyiVRZbU14GtwjhOcr67N4jb7dKfvRpztkAuDiCH4DOfcDL78uoWen8pO8kJbTux9TGo_00Oy1uQyyHQ8liug6ciOH2GEkrg4Uel8GPqb8gnVVOjT0l766yQO6uX8-ZC3vQ6ohBxV8mXed9UcfvyB2fiff_5CPBvNTPlhkIsd8QibXfH0F_DBPfH5dCpBKFsvVwxSwKska_eVDhm5bOR6eU-C0lCzJgmoZfVdMq4D9bimlg32_I4ul6tp7Etxe352c7qIxhILEdBNroscpgWgK8AaowDiSvlUFd5bMLlzORk7mHtSo9bpxBsw3iFkmGDuskqj9-krsdW0Db4W0lROxRZVjildUZQpwCdgDGap8prGzsTxhvcljPjjXAbjvgz3kLgoVVoOfJqJo4n02wC68RDRLvN5Itj07vN6lmQ_MAgucLQQdFxsk5Fn9Ewcbta5pH3EzhHXYNuvS3YomjjNZ0L-g6LgSF0yiOI3D858KLYXN1eX5eXH64u34kmAdwhBf_tiq1v1eEDGS1e9C0L7E4lu7o8 |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Comparison+of+radiation+damage+in+silicon+induced+by+proton+and+neutron+irradiation&rft.jtitle=IEEE+transactions+on+nuclear+science&rft.au=Ruzin%2C+A&rft.au=Casse%2C+G&rft.au=Glaser%2C+M&rft.au=Zanet%2C+A&rft.date=1999-10-01&rft.issn=0018-9499&rft.volume=46&rft.issue=5&rft.spage=1310&rft.epage=1313&rft_id=info:doi/10.1109%2F23.795808&rft.externalDBID=NO_FULL_TEXT |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0018-9499&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0018-9499&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0018-9499&client=summon |