Comparison of radiation damage in silicon induced by proton and neutron irradiation

• Published in: IEEE transactions on nuclear science Vol. 46; no. 5; pp. 1310 - 1313
• Main Authors: Ruzin, A., Casse, G., Glaser, M., Zanet, A., Lemeilleur, F., Watts, S.
• Format: Journal Article
• Language: English
• Published: United States IEEE 01.10.1999
• Subjects: COMPARATIVE EVALUATIONS; CRYSTAL DEFECTS; Detectors; Energy (nuclear); Energy loss; Energy use; IMPURITIES; INSTRUMENTATION; Leakage current; MATERIALS SCIENCE; NEUTRONS; PHYSICAL RADIATION EFFECTS; Predictive models; PROTONS; Radiation damage; Radiation detectors; Radiation hardness; Semiconductor radiation detectors; Semiconductors; SI SEMICONDUCTOR DETECTORS; SILICON; Silicon radiation detectors; Space charge; Voltage
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/23.795808

The subject of radiation damage to Si detectors induced by 24-GeV/c protons and nuclear reactor neutrons has been studied. Detectors fabricated on single-crystal silicon enriched with various impurities have been tested. Significant differences in electrically active defects have been found between the various types of material. The results of the study suggest for the first time that the widely used nonionizing energy loss (NIEL) factors are insufficient for normalization of the electrically active damage in case of oxygen- and carbon-enriched silicon detectors. It has been found that a deliberate introduction of impurities into the semiconductor can affect the radiation hardness of silicon detectors.