Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization

High temperature epitaxial growth processes for SiC bulk and thin films are reviewed from an academic point of view using heat and mass transfer modeling and simulation. The objective is to show that this modeling approach could provide further information to fabrication and characterization for the...

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Bibliographic Details
Published inApplied surface science Vol. 212-213; pp. 177 - 183
Main Authors Pons, M, Baillet, F, Blanquet, E, Pernot, E, Madar, R, Chaussende, D, Mermoux, M, Di Coccio, L, Ferret, P, Feuillet, G, Faure, C, Billon, Th
Format Journal Article
LanguageEnglish
Published Elsevier B.V 15.05.2003
Elsevier
Subjects
Bulk growth
Chemical Sciences
Epitaxy
Material chemistry
Modeling
Silicon carbide
Silicon carbide
Epitaxy
81.15.Gh Chemical vapor deposition
47.70.Fw Chemically reactive flows
81.10.Bk Growth from vapor
Modeling
Bulk growth
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Summary:High temperature epitaxial growth processes for SiC bulk and thin films are reviewed from an academic point of view using heat and mass transfer modeling and simulation. The objective is to show that this modeling approach could provide further information to fabrication and characterization for the improvement of the knowledge of the growth history and to quantify the different phenomena leading to growth. Recent results of our integrated research program on SiC taking into account the fabrication, process modeling and characterization will be presented.
ISSN:0169-4332
1873-5584
DOI:10.1016/S0169-4332(03)00064-3