Conversion model of radiation-induced interface-trap buildup and the some examples of its application

It is supposed that the rechargeable radiation-induced positive centers in the oxide must have energy levels within the Si forbidden gap. These assumptions served as the basis for the physical model of the interface-trap build-up and enhanced low dose rate sensitivity (ELDRS) in bipolar devices. As...

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Bibliographic Details
Published inIOP conference series. Materials Science and Engineering Vol. 151; no. 1; pp. 12001 - 12006
Main Authors Pershenkov, V S, Sogoyan, A V, Telets, V A
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.10.2016
Subjects
Conversion
Dosage
Energy levels
Radiation
Radiation effects
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Summary:It is supposed that the rechargeable radiation-induced positive centers in the oxide must have energy levels within the Si forbidden gap. These assumptions served as the basis for the physical model of the interface-trap build-up and enhanced low dose rate sensitivity (ELDRS) in bipolar devices. As examples of using the proposed conversion model is considered for bipolar devices space application.
ISSN:1757-8981
1757-899X
DOI:10.1088/1757-899X/151/1/012001