Ordering structure along the [ 0 0 1 ] direction of InAlAs

• Published in: Journal of crystal growth Vol. 272; no. 1; pp. 9 - 14
• Main Authors: Kurihara, K., Namita, H., Ueda, R., Takashima, M., Akimoto, K., Sakata, K., Takahashi, T., Nakamura, T., Shimoyama, K.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.12.2004
• Subjects: A1. Ordering; A2. Natural super lattice; A3. Metalorganic vapor phase epitaxy; B1. In compounds; B1. InAlAs; B1. InAlGaP; B2. III–V materials; 61.10.Nz; A2. Natural super lattice; B2. III–V materials; B1. InAlAs; A3. Metalorganic vapor phase epitaxy; 81.15.Gh; A1. Ordering; 82.33.Ya; B1. InAlGaP; B1. In compounds; 81.05.Ea
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2004.08.093

We have found a new type ordering structure in materials containing Indium. Generally conventional natural superlattice (NSL) stacks toward to { 1 1 1 } . However, the periodical structure in question stacks along the [ 0 0 1 ] direction, sometimes parallel to the substrate. We have studied the structure in detail as seen in InAlAs-bulk layers on a vicinal ( 0 0 1 ) InP substrate. We investigated the structure using a transmission electron microscope and a high-resolution X-ray diffraction method, and confirmed the structure stacks along [ 0 0 1 ] direction with a pitch three times that of the InP lattice constant. We found a similar structure in InAlGaP-bulk layers on a ( 1 0 0 ) GaAs substrate 10 ∘ tilted toward the 〈 0 1 1 〉 direction. The mechanisms have not been clarified yet, however, we consider that atomic steps on the epitaxial surface could be related.