Electrical and microstructural characterization of two-step sintered ceria-based electrolytes
Gadolinium-doped ceria-based materials with and without Ga-additions were prepared following several firing schedules including one peak sintering temperature (up to 1300 °C) with or without subsequent dwell at lower temperature (at 1150 °C). Sintered disks with submicrometric grain size and densifi...
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Published in | Journal of power sources Vol. 187; no. 1; pp. 204 - 208 |
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Main Authors | , , , |
Format | Journal Article Conference Proceeding |
Language | English |
Published |
Amsterdam
Elsevier B.V
01.02.2009
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | Gadolinium-doped ceria-based materials with and without Ga-additions were prepared following several firing schedules including one peak sintering temperature (up to 1300
°C) with or without subsequent dwell at lower temperature (at 1150
°C). Sintered disks with submicrometric grain size and densifications in the order of 92% or higher, were obtained in this manner, with the final result depending slightly on the sintering profile and presence of Ga as dopant. All materials were characterized by scanning electron microscopy, X-ray diffraction and impedance spectroscopy in air, in the temperature range 200–800
°C. The grain boundary arcs were found slightly dependent on grain size and porosity but significantly on Ga-doping, due to the likely presence of large concentrations of Ga along the grain boundary region. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0378-7753 1873-2755 |
DOI: | 10.1016/j.jpowsour.2008.10.071 |