Electrical and microstructural characterization of two-step sintered ceria-based electrolytes

Gadolinium-doped ceria-based materials with and without Ga-additions were prepared following several firing schedules including one peak sintering temperature (up to 1300 °C) with or without subsequent dwell at lower temperature (at 1150 °C). Sintered disks with submicrometric grain size and densifi...

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Published inJournal of power sources Vol. 187; no. 1; pp. 204 - 208
Main Authors Lapa, C.M., Souza, D.P. Ferreira de, Figueiredo, F.M.L., Marques, F.M.B.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 01.02.2009
Elsevier
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Summary:Gadolinium-doped ceria-based materials with and without Ga-additions were prepared following several firing schedules including one peak sintering temperature (up to 1300 °C) with or without subsequent dwell at lower temperature (at 1150 °C). Sintered disks with submicrometric grain size and densifications in the order of 92% or higher, were obtained in this manner, with the final result depending slightly on the sintering profile and presence of Ga as dopant. All materials were characterized by scanning electron microscopy, X-ray diffraction and impedance spectroscopy in air, in the temperature range 200–800 °C. The grain boundary arcs were found slightly dependent on grain size and porosity but significantly on Ga-doping, due to the likely presence of large concentrations of Ga along the grain boundary region.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
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content type line 23
ISSN:0378-7753
1873-2755
DOI:10.1016/j.jpowsour.2008.10.071