A low-power 2/5.8-GHz dual-wide-band CMOS LC-VCO with switched-inductor technique

• Published in: International journal of electronics Vol. 94; no. 6; pp. 623 - 632
• Main Authors: Liou, W.-R., Chen, T.-H., Yeh, M.-L., Ho, J.-J., Jan, G. E.
• Format: Journal Article
• Language: English
• Published: London Taylor & Francis Group 01.06.2007; Taylor & Francis
• Subjects: Applied sciences; Circuit properties; Design. Technologies. Operation analysis. Testing; Dielectric, amorphous and glass solid devices; Dual-band; Electric, optical and optoelectronic circuits; Electronic circuits; Electronics; Exact sciences and technology; Integrated circuits; Magnetic devices; Oscillators, resonators, synthetizers; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Switched inductor technique; Voltage control oscillator (VCO); Phase noise; Voltage controlled oscillator; Oscillation frequency; Actuation voltage; Inductor; Voltage control; Tuning; Switching; MOS capacitor; Varactor diode; Frequency band; Wide band; Energy dissipation; Complementary MOS technology; Low-power electronics
• ISSN: 0020-7217; 1362-3060
• DOI: 10.1080/00207210701322105

A fully integrated dual-band LC voltage control oscillator, designed in a 0.18-µm CMOS technology for 5.8-GHz/2.0-GHz wireless communication applications, is described. The frequency band switching is accomplished with switched-inductor technique. The dual-band oscillator can be operated in 5.38-6.23 GHz and 1.78-2.07 GHz with 15% frequency tuning range. Two different inductors are used for the frequency band switching. Frequency tuning is implemented by varying the capacitance of a MOS varactor. The measured phase noise is −109 dBc/Hz @ 1 MHz and −112 dBc/Hz @ 1 MHz for frequency at 5.8 GHz and 2 GHz, respectively. This oscillator is fabricated in UMC's 0.18-µm one-poly-six-metal 1.8 V process. The power dissipation of this dual-band VCO is 11.7 and 9.3 mW for oscillation frequency of 2 GHz and 5.8 GHz, respectively.