ON current enhancement of nanowire Schottky barrier tunnel field effect transistors

Silicon nanowire Schottky barrier tunnel field effect transistors (NW-SBTFETs) are promising structures for high performance devices. In this study, we fabricated NW-SBTFETs to investigate the effect of nanowire structure on the device characteristics. The NW-SBTFETs were operated with a backgate bi...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 55; no. 4S; pp. 4 - 8
Main Authors Takei, Kohei, Hashimoto, Shuichiro, Sun, Jing, Zhang, Xu, Asada, Shuhei, Xu, Taiyu, Matsukawa, Takashi, Masahara, Meishoku, Watanabe, Takanobu
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.04.2016
Subjects
Barriers
Cross sections
Devices
Field effect transistors
Modulation
Nanowires
Semiconductor devices
Tunnels (transportation)
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Summary:Silicon nanowire Schottky barrier tunnel field effect transistors (NW-SBTFETs) are promising structures for high performance devices. In this study, we fabricated NW-SBTFETs to investigate the effect of nanowire structure on the device characteristics. The NW-SBTFETs were operated with a backgate bias, and the experimental results demonstrate that the ON current density is enhanced by narrowing the width of the nanowire. We confirmed using the Fowler-Nordheim plot that the drain current in the ON state mainly comprises the quantum tunneling component through the Schottky barrier. Comparison with a technology computer aided design (TCAD) simulation revealed that the enhancement is attributed to the electric field concentration at the corners of cross-section of the NW. The study findings suggest an effective approach to securing the ON current by Schottky barrier width modulation.
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.55.04ED07