Structures and Properties of Doped Bismuth Zinc Niobate Cubic Pyrochlore Thin Films Prepared by Pulsed Laser Deposition

• Published in: Ferroelectrics Vol. 381; no. 1; pp. 87 - 91
• Main Authors: Zhang, Xiaohua, Ren, Wei, Shi, Peng, Tian, Aifen, Chen, Xiaofeng, Wu, Xiaoqing, Yao, Xi
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Colchester Taylor & Francis Group 01.01.2009; Taylor & Francis
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; cubic pyrochlore structure; Dielectric properties of solids and liquids; dielectric property; Dielectric thin films; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Doped BZN thin films; Exact sciences and technology; Permittivity (dielectric function); Physics; pulsed laser deposition; tunability; Pyrochlore; Scanning electron microscopy; Cubic lattices; dielectric property; Calcium additions; Dielectric properties; Pulsed laser deposition; Crystallinity; cubic pyrochlore structure; Titanium additions; Bismuth Zinc Niobates Mixed; Doped BZN thin films; Dielectric thin films; Permittivity; tunability
• ISSN: 0015-0193; 1563-5112
• DOI: 10.1080/00150190902869707

Doped Bi 2 O 3 -ZnO-Nb 2 O 5 (BZN) cubic pyrochlore thin films are prepared on Pt/Ti/SiO 2 /Si(100) substrates by pulsed laser deposition process. Dielectric properties of BZN thin films can be tailored by doping. The thin films of pure BZN and BZN doped by Ti and Ca, as well as the BZN thin films with excessive Bi 2 O 3 and/or ZnO have been prepared. The structure, crystallinity and dielectric properties have been investigated. It's found that excessive Bi 2 O 3 and ZnO increase dielectric constant and also loss tangent. For the doped BZN thin films, A-site Ca-substitution (Bi 1.5 Zn 0.1 Ca 0.4 )Nb 1.5 O 7 films exhibit small dielectric constant of 129, while B-site Ti-substitution (Bi 1.5 Zn 0.5 ) (Nb 0.5 Ti 1.5 )O 7 thin films exhibit larger dielectric constant of 226.