Oxygen Vacancy in WO3 Film-based FET with Ionic Liquid Gating

• Published in: Scientific reports Vol. 7; no. 1; pp. 1 - 10
• Main Authors: Kalhori, Hossein, Coey, Michael, Abdolhosseini Sarsari, Ismaeil, Borisov, Kiril, Porter, Stephen Barry, Atcheson, Gwenael, Ranjbar, Mehdi, Salamati, Hadi, Stamenov, Plamen
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group 25.09.2017; Nature Publishing Group UK
• Subjects: Gating; Ions; Oxygen; Solvents; Transistors

Ionic liquid gating is a versatile method for inducing a metal-insulator transition in field-effect transistor device structures. The mechanism of carrier doping in metal oxide films is under debate. Ionic liquid gating of a WO3 film-based field effect transistor is discussed in this report. Flat an...