Oxygen Vacancy in WO3 Film-based FET with Ionic Liquid Gating

• Published in: Scientific reports Vol. 7; no. 1; pp. 1 - 10
• Main Authors: Kalhori, Hossein, Coey, Michael, Abdolhosseini Sarsari, Ismaeil, Borisov, Kiril, Porter, Stephen Barry, Atcheson, Gwenael, Ranjbar, Mehdi, Salamati, Hadi, Stamenov, Plamen
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group 25.09.2017; Nature Publishing Group UK
• Subjects: Gating; Ions; Oxygen; Solvents; Transistors
• ISSN: 2045-2322; 2045-2322
• DOI: 10.1038/s41598-017-12516-y

Ionic liquid gating is a versatile method for inducing a metal-insulator transition in field-effect transistor device structures. The mechanism of carrier doping in metal oxide films is under debate. Ionic liquid gating of a WO3 film-based field effect transistor is discussed in this report. Flat and relatively smooth WO3 films were deposited on SrTiO3 substrates by pulsed laser deposition. Swept and constant gate voltage characteristics are measured in both argon and oxygen atmospheres. The results show a clear dependence on the oxygen pressure of the experimental chamber. Metallic behavior in the films is attributed to oxygen vacancy formation in the WO3 layer induced by the high electric field at the oxide-ionic liquid interface. The density of states of a monoclinic supercell of oxygen deficient WO3 was studied by density functional theory (DFT). Calculated W and O partial densities of states verify metallic behavior even at dilute oxygen vacancy concentrations and show the role of W and O orbitals in the conductivity.