High-quality, 2-inch-diameter m-plane GaN substrates grown by hydride vapor phase epitaxy on acidic ammonothermal seeds
In this paper, we discusse the origin of basal-plane stacking faults (BSFs) generated in the homoepitaxial hydride vapor phase epitaxy (HVPE) growth of m-plane gallium nitride (GaN). We investigated the effects of seed quality, especially dislocation density, on BSF generation during homoepitaxy. Th...
Saved in:
Published in | Japanese Journal of Applied Physics Vol. 55; no. 5S; p. 5 |
---|---|
Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
The Japan Society of Applied Physics
01.05.2016
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | In this paper, we discusse the origin of basal-plane stacking faults (BSFs) generated in the homoepitaxial hydride vapor phase epitaxy (HVPE) growth of m-plane gallium nitride (GaN). We investigated the effects of seed quality, especially dislocation density, on BSF generation during homoepitaxy. The results clearly identify basal-plane dislocation in the seed as a cause of BSF generation. We realized high-quality m-plane GaN substrates with a 2-in. diameter using HVPE on low-dislocation-density m-plane seeds. |
---|---|
Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0021-4922 1347-4065 |
DOI: | 10.7567/JJAP.55.05FC01 |