Mosfet and MOS Capacitor Responses to Ionizing Radiation

The ionizing radiation responses of metal oxide semiconductor (MOS) field-effect transistors (FETs) and MOS capacitors are compared. It is shown that the radiation-induced threshold voltage shift correlates closely with the shift in the MOS capacitor inversion voltage. The radiation-induced interfac...

Full description

Saved in:
Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 31; no. 6; pp. 1461 - 1466
Main Authors Benedetto, J. M., Boesch, H. E.
Format Journal Article
LanguageEnglish
Published Legacy CDMS IEEE 01.12.1984
Subjects
Charge measurement
Charge pumps
Current measurement
Density measurement
Electronics And Electrical Engineering
FETs
Interface states
Ionizing radiation
MOS capacitors
MOSFET circuits
Threshold voltage
Online AccessGet full text

Cover

More Information
Summary:The ionizing radiation responses of metal oxide semiconductor (MOS) field-effect transistors (FETs) and MOS capacitors are compared. It is shown that the radiation-induced threshold voltage shift correlates closely with the shift in the MOS capacitor inversion voltage. The radiation-induced interface-state density of the MOSFETs and MOS capacitors was determined by several techniques. It is shown that the presence of "slow" states can interfere with the interface-state measurements.
Bibliography:CDMS
Legacy CDMS
SourceType-Scholarly Journals-2
ObjectType-Feature-2
ObjectType-Conference Paper-1
content type line 23
SourceType-Conference Papers & Proceedings-1
ObjectType-Article-3
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.1984.4333530