Concurrent synthesis and boron-doping of amorphous carbon films by focused ion beam-assisted chemical vapor deposition
•Boron-doped carbon films via focused ion beam induced chemical vapor deposition.•Concurrent deposition, boron doping, and patterning of boron-doped carbon films.•Lithography-free patterning of boron-doped carbon films. A method to directly deposit boron-doped amorphous carbon films via focused ion...
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Published in | Thin solid films Vol. 730; p. 138704 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
31.07.2021
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Subjects | |
Online Access | Get full text |
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Summary: | •Boron-doped carbon films via focused ion beam induced chemical vapor deposition.•Concurrent deposition, boron doping, and patterning of boron-doped carbon films.•Lithography-free patterning of boron-doped carbon films.
A method to directly deposit boron-doped amorphous carbon films via focused ion beam-assisted chemical vapor deposition is reported. The presence of boron in the deposited films was verified by X-ray photoelectron spectroscopy. Raman spectroscopy analysis confirmed the amorphousity of the films. The as-deposited films exhibited typical semiconducting behavior from electrical resistance versus temperature measurements. The presented fabrication technique is a one step process for the simultaneous deposition, boron-doping, and patterning of the films, and hence may offer an effective way to directly fabricate boron-doped amorphous carbon-based devices without the need for templates, which is highly advantageous for applications. |
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ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/j.tsf.2021.138704 |