Simulation Study of 4H-SiC Trench Insulated Gate Bipolar Transistor with Low Turn-Off Loss

In this work, an insulated gate bipolar transistor (IGBT) is proposed that introduces a portion of the p-polySi/p-SiC heterojunction on the collector side to reduce the tail current during device turn-offs. By adjusting the doping concentration on both sides of the heterojunction, the turn-off loss...

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Bibliographic Details
Published inMicromachines (Basel) Vol. 10; no. 12; p. 815
Main Authors Mao, Hong-Kai, Wang, Ying, Wu, Xue, Su, Fang-Wen
Format Journal Article
LanguageEnglish
Published Switzerland MDPI AG 26.11.2019
MDPI
Subjects
Efficiency
Electric fields
Etching
Forward characteristics
Heterojunctions
Insulated gate bipolar transistors
Semiconductor devices
Simulation
Transistors
IGBT
ON-state voltage
turn-off loss
4H-SiC
breakdown voltage (BV)
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Summary:In this work, an insulated gate bipolar transistor (IGBT) is proposed that introduces a portion of the p-polySi/p-SiC heterojunction on the collector side to reduce the tail current during device turn-offs. By adjusting the doping concentration on both sides of the heterojunction, the turn-off loss is further reduced without sacrificing other characteristics of the device. The electrical characteristics of the device were simulated through the Silvaco ATLAS 2D simulation tool and compared with the traditional structure to verify the design idea. The simulation results show that, compared with the traditional structure, the turn-off loss of the proposed structure was reduced by 58.4%, the breakdown voltage increased by 13.3%, and the forward characteristics sacrificed 8.3%.
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content type line 23
ISSN:2072-666X
2072-666X
DOI:10.3390/mi10120815