Disilane-bridged architectures: an emerging class of molecular materials
Disilanes are organosilicon compounds that contain saturated Si-Si bonds. The structural characteristics of Si-Si single bonds resemble those of C-C single bonds, but their electronic structure is more similar to that of C&z.dbd;C double bonds, as Si-Si bonds have a higher HOMO energy level. The...
Saved in:
Published in | Chemical science (Cambridge) Vol. 14; no. 38; pp. 1385 - 142 |
---|---|
Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Cambridge
Royal Society of Chemistry
04.10.2023
The Royal Society of Chemistry |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | Disilanes are organosilicon compounds that contain saturated Si-Si bonds. The structural characteristics of Si-Si single bonds resemble those of C-C single bonds, but their electronic structure is more similar to that of C&z.dbd;C double bonds, as Si-Si bonds have a higher HOMO energy level. These organosilicon compounds feature unique intramolecular σ electron delocalization, low ionization potentials, polarizable electronic structure, and σ-π interaction. It has been demonstrated that the employment of disilane units (Si-Si) is a versatile and effective approach for finely adjusting the photophysical properties of organic materials in both solution and solid states. In this review, we present and discuss the structure, properties, and relationships of novel σ-π-conjugated hybrid architectures with saturated Si-Si σ bonds. The application of disilane-bridged σ-conjugated compounds as optoelectronic materials, multifunctional solid-state emitters, CPL, and non-linear optical and stimuli-responsive materials is also reviewed.
We present and discuss the structures, properties, and applications of novel σ-π-conjugated hybrid architectures with saturated Si-Si σ bonds in this review. |
---|---|
Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 ObjectType-Review-3 content type line 23 |
ISSN: | 2041-6520 2041-6539 |
DOI: | 10.1039/d3sc02690f |