A 110-134-GHz SiGe Amplifier With Peak Output Power of 100-120 mW

• Published in: IEEE transactions on microwave theory and techniques Vol. 62; no. 12; pp. 2990 - 3000
• Main Authors: Hsin-Chang Lin, Rebeiz, Gabriel M.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.12.2014; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: D-band; Gain; HBT; Impedance; Impedance matching; Metals; millimeter-wave (mmW) integrated circuits; power amplifier (PA); Power generation; Silicon germanium; silicon-germanium (SiGe); Transistors
• ISSN: 0018-9480; 1557-9670
• DOI: 10.1109/TMTT.2014.2360679

This paper presents a fully integrated eight-way power-combining amplifier for 110-134-GHz applications in an advanced 90-nm silicon-germanium HBT technology. The eight-way amplifier is implemented using four-stage common-emitter single-ended power amplifiers (PAs) as building blocks, and reactive λ/4 impedance transformation networks are used for power combining. The single-ended PA breakout has a small-signal gain of 20 dB at 116 GHz, and saturation output power ( Psat) of 12.5-13.8 dBm at 114-130 GHz. The eight-way power-combining PA achieves a small-signal gain of 15 dB at 116 GHz, and Psat of 20-20.8 dBm at 114-126 GHz with a power-added efficiency of 7.6%-6.3%. The eight-way amplifier occupies 4.95 mm 2 (including pads) and consumes a maximum current of 980 mA from a 1.6-V supply. To our knowledge, this is the highest power silicon-based D-band amplifier to date.