Investigation of lattice-modulated AlInGaN as a barrier layer in near-ultraviolet light-emitting diodes by numerical analysis and fabrication

The effects of using lattice-modulated AlInGaN as barriers in the active region were investigated in near-ultraviolet light-emitting diodes (LEDs). Both a stronger localization effect with wider barriers and a higher energy band gap existed in AlInGaN/InGaN LEDs, compared with GaN/InGaN LEDs. An inc...

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Published inJapanese Journal of Applied Physics Vol. 53; no. 5; pp. 52101 - 1-052101-6
Main Authors Fu, Yi-Keng, Lu, Yu-Hsuan, Hsu, Chih-Hao, Chang, Hsiu-Mei, Su, Yan-Kuin
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.05.2014
Subjects
Barriers
Computer simulation
Current injection
Energy bands
Gallium nitrides
Indium gallium nitrides
Lattices
Light-emitting diodes
Localization
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Summary:The effects of using lattice-modulated AlInGaN as barriers in the active region were investigated in near-ultraviolet light-emitting diodes (LEDs). Both a stronger localization effect with wider barriers and a higher energy band gap existed in AlInGaN/InGaN LEDs, compared with GaN/InGaN LEDs. An increase in the carrier concentration in the active layer, a reduction in lattice mismatch that induced polarization mismatch in the active layer, and suppression of electron overflow can be found by numerical simulation. By 100 mA current injection, the AlInGaN/InGaN LED output power can be increased by 33.1%, compared with that of GaN/InGaN LED.
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content type line 23
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.53.052101