Reduction of the ambient effect in multilayer InSe transistors and a strategy toward stable 2D-based optoelectronic applications

• Published in: Nanoscale Vol. 12; no. 35; pp. 18356 - 18362
• Main Authors: Wang, Yanhao, Gao, Jianwei, Wei, Bin, Han, Yingkuan, Wang, Chao, Gao, Yakun, Liu, Hong, Han, Lin, Zhang, Yu
• Format: Journal Article
• Language: English
• Published: Cambridge Royal Society of Chemistry 17.09.2020
• Subjects: Bias; Devices; Field effect transistors; Indium selenides; Multilayers; Optoelectronic devices; Photoconductivity; Transition metal compounds
• ISSN: 2040-3364; 2040-3372
• DOI: 10.1039/d0nr04120c

Indium selenide (InSe) photodetection devices attract significant research interest. However, InSe is unstable and degrades rapidly in ambient conditions, thus it is still a challenge to fabricate stable optoelectronic devices. In this work, multilayer InSe FETs are fabricated, and their photoresponse properties are investigated. Both positive and negative photoconductivities are observed for the first time in the same InSe FET in a wide spectral range from 450 nm to 660 nm, which can be tuned through changing either the gate bias or the source-drain bias. A physical mechanism is proposed to explain the dual-photoresponse phenomenon in our devices. Based on the proposed physical mechanism, as a proof of concept, a facile and simple approach is used to eliminate the negative photoconductivity of the InSe FET. Our results will offer valuable strategies for stable multilayer InSe optoelectronic device design, and a practical scheme for improving the performance of other transition metal dichalcogenide devices as well. Both positive and negative photoconductivities are observed in InSe FETs for the first time, and a physical mechanism is proposed.