Mode analysis of GaN two-dimensional photonic crystal nanocavities undercut by photo-electrochemical etching

• Published in: Japanese Journal of Applied Physics Vol. 62; no. SG; p. SG1019
• Main Authors: Tajiri, T., Yoshida, M., Sosumi, S., Shimoyoshi, K., Uchida, K.
• Format: Journal Article
• Language: English
• Published: Tokyo IOP Publishing 01.06.2023; Japanese Journal of Applied Physics
• Subjects: Electrochemical etching; gallium nitride; Indium gallium nitrides; Light sources; Numerical analysis; photoelectrochemical etching; Photoluminescence; photonic crystal; Photonic crystals; Quantum wells; Room temperature; Two dimensional analysis; Wavelengths
• ISSN: 0021-4922; 1347-4065
• DOI: 10.35848/1347-4065/acba80

Abstract GaN two-dimensional (2D) photonic crystal nanocavities with a single embedded InGaN quantum well are undercut by photo-electrochemical (PEC) etching and optically characterized to investigate the fundamental mode. The PEC etching selectively removes an InGaN-based sacrificial layer to form air-suspended GaN photonic crystal cavity slabs. We investigated the resonant modes of the photonic crystal nanocavities by micro-photoluminescence spectroscopy measurement at room temperature. The wavelengths of the measured resonant peaks and their dependence on the photonic crystal period agreed well with numerical analysis, allowing us to determine the fundamental mode in the measured spectra. The highest quality factor for the fundamental mode reached 3400 at blue wavelengths. This work would contribute to the improvement of GaN 2D photonic crystal nanocavities using PEC etching as well as their applications towards integrated light sources in visible wavelengths.