Study of formation mechanism of nickel silicide discontinuities in high-performance complementary metal-oxide-semiconductor devices

We performed detailed analysis of nickel silicide discontinuities induced by agglomeration, which causes the increased electric resistance in high-performance complementary metal-oxide-semiconductor devices, by using advanced physical analysis techniques: transmission electron microscopy (TEM), scan...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 53; no. 2; pp. 21301 - 1-021301-5
Main Authors Kudo, Shuichi, Hirose, Yukinori, Ogawa, Yoshifumi, Yamaguchi, Tadashi, Kashihara, Keiichiro, Murata, Naofumi, Katayama, Toshiharu, Hattori, Nobuyoshi, Koyama, Toru, Nakamae, Koji
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.02.2014
Subjects
Agglomeration
Devices
Discontinuity
Electron back scatter diffraction
Elongation
Formations
Nickel silicide
Scanning electron microscopy
Three dimensional
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Summary:We performed detailed analysis of nickel silicide discontinuities induced by agglomeration, which causes the increased electric resistance in high-performance complementary metal-oxide-semiconductor devices, by using advanced physical analysis techniques: transmission electron microscopy (TEM), scanning electron microscopy (SEM) electron backscatter diffraction (EBSD) analysis, and three-dimensional atom-probe (AP) analysis. We confirmed that the agglomeration of the nickel silicide is related to elongated-triangular-shaped splits, which cause discontinuities that occur at low-angle grain boundaries pinned by boron clusters even with small stress. We successfully determined the formation mechanism of these nickel silicide discontinuities in detail.
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.53.021301