Local excitation and emission dynamics of an isolated single basal-plane stacking-fault in GaN studied by spatio-time-resolved cathodoluminescence

Local excitation and emission dynamics of an isolated "Type-I1 basal-plane stacking-fault (BSF) in very low dislocation density GaN were studied using spatio-time-resolved cathodoluminescence. The low temperature lifetime of the BSF emission was quantified to be 640 ps. The carrier diffusion le...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 54; no. 3; pp. 30303 - 1-030303-4
Main Authors Furusawa, Kentaro, Ishikawa, Yoichi, Ikeda, Hirotaka, Fujito, Kenji, Chichibu, Shigefusa F.
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.03.2015
Subjects
Cathodoluminescence
Diffusion length
Dynamic tests
Dynamics
Emission
Emission analysis
Excitation
Gallium nitrides
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Summary:Local excitation and emission dynamics of an isolated "Type-I1 basal-plane stacking-fault (BSF) in very low dislocation density GaN were studied using spatio-time-resolved cathodoluminescence. The low temperature lifetime of the BSF emission was quantified to be 640 ps. The carrier diffusion length was estimated by observing the temporal delay of the BSF peak relative to the free-exciton signal as a function of distance from the BSF. The results indicate that the near-band-edge emission leads to subsequent optical excitation of the BSF that increases the apparent diffusion length. Limiting the observation volume can improve the spatial resolution.
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.54.030303