Modes-competition dynamics in a semiconductor quantum dot light emitting diode subject to optical feedback
Due to its benefits in high stability and ability to speed up information processing in machine learning applications, quantum dot light-emitting diode (QDLED) has received a lot of attention for the next generation of local communication applications. Some optical applications for reinforcement lea...
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Published in | Results in optics Vol. 14; p. 100608 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.02.2024
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | Due to its benefits in high stability and ability to speed up information processing in machine learning applications, quantum dot light-emitting diode (QDLED) has received a lot of attention for the next generation of local communication applications. Some optical applications for reinforcement learning in computers are disgusted by the mode-competition dynamics of multimode semiconductor QDLEDs. The chaotic modes-competition dynamics in a multimode semiconductor QDLED with optical feedback (OFB) are quantitatively assessed in this study.
We can manage the chaotic mode-competition dynamics among the longitudinal modes by inserting an external optical signal into some of them. The dominant-mode ratio for the injected mode increases along with the increase in feedback strength. We discover that, as a result of the various OFB phases, the characteristics of the dominant mode ratio in terms of OFB intensity vary among the modes. We also assess the connection between the photon dynamic range and the region for side mode suppression ratio. The OFB range does not correlate to the region for the big dominant mode ratio. The intricate dynamics of mode competition in multimode semiconductor QDLEDs with OFB are the cause of this disparity. When the modulation frequency corresponded with a rational number of the optical feedback's round trip duration, the chaotic mode-competition dynamics remained high. |
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ISSN: | 2666-9501 2666-9501 |
DOI: | 10.1016/j.rio.2024.100608 |