Stabilization of sputtered AlN/sapphire templates during high temperature annealing

• Published in: Journal of crystal growth Vol. 512; pp. 142 - 146
• Main Authors: Hagedorn, S., Walde, S., Mogilatenko, A., Weyers, M., Cancellara, L., Albrecht, M., Jaeger, D.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.04.2019; Elsevier BV
• Subjects: A1. Crystal morphology; A1. Substrates; A3. Physical vapor deposition processes; Aluminum nitride; Annealing; B1. Nitrides; B1. Sapphire; Dislocation density; Epitaxial growth; High temperature; Sapphire; Temperature control; Thickness; Threading dislocations; A3. Physical vapor deposition processes; B1. Sapphire; B1. Nitrides; A1. Crystal morphology; A1. Substrates
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2019.02.024

•Annealing of sputtered AlN on sapphire for varying temperatures and AlN thicknesses.•Decrease of threading dislocation density in AlN from 3 × 1010 cm−2 to 5 × 108 cm−2.•Excessive polycrystalline AlON formation starts at the AlN/sapphire interface.•Epitaxially oriented (1 1 1) AlON found on AlN surface blocking further growth. In this work we investigated annealing of 350 nm and 450 nm thick sputtered (SP) AlN on sapphire in the temperature range from 1650 °C to 1730 °C. The most distinct decrease in the threading dislocation density (TDD), from initially 3 × 1010 cm−2 to 4 × 108 cm−2, was achieved for 450 nm AlN at an annealing temperature of 1680 °C. Unfortunately, for temperatures ≥1680 °C the reaction between AlN and sapphire partially disturbs the AlN layer by formation of polycrystalline AlON at the AlN/sapphire interface. In addition, we found epitaxially oriented (1 1 1) AlON on top of the AlN layers that hinders further epitaxial growth. This problem can be prevented by lower annealing temperatures (≤1680 °C) and thick SP AlN layers. The importance of an appropriate AlN sputtered layer thickness and of a precise temperature control during high temperature annealing are shown in this paper to ultimately achieve a balance between low TDD and suppression of excessive AlON formation.