Graphene bilayer with a twist: electronic structure

We consider a graphene bilayer with a relative small angle rotation between the layers--a stacking defect often seen in the surface of graphite--and calculate the electronic structure near zero energy in a continuum approximation. Contrary to what happens in an AB stacked bilayer and in accord with...

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Bibliographic Details
Published inPhysical review letters Vol. 99; no. 25; p. 256802
Main Authors Lopes Dos Santos, J M B, Peres, N M R, Castro Neto, A H
Format Journal Article
LanguageEnglish
Published United States 21.12.2007
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Summary:We consider a graphene bilayer with a relative small angle rotation between the layers--a stacking defect often seen in the surface of graphite--and calculate the electronic structure near zero energy in a continuum approximation. Contrary to what happens in an AB stacked bilayer and in accord with observations in epitaxial graphene, we find: (a) the low energy dispersion is linear, as in a single layer, but the Fermi velocity can be significantly smaller than the single-layer value; (b) an external electric field, perpendicular to the layers, does not open an electronic gap.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.99.256802