High-Performance Metal-Insulator-Metal Tunnel Diode Selectors

• Published in: IEEE electron device letters Vol. 35; no. 1; pp. 63 - 65
• Main Authors: Govoreanu, Bogdan, Adelmann, Christoph, Redolfi, Augusto, Leqi Zhang, Clima, Sergiu, Jurczak, Malgorzata
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.01.2014; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Arrays; Compound structure devices; Diodes; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; Exact sciences and technology; Integrated circuits; Integrated circuits by function (including memories and processors); Metal-insulator-metal (MIM); Nonvolatile memory; one-selector one-resistor (1S1R) cell; Optical switches; Random access memory; Reliability; resistive RAM; selector; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; tunnel diode; Tunneling; Ultrathin films; Autonomous system; High strength current; High performance; Bidirectional link; MIM structure; Tantalum oxide; Dielectric materials; Random access memory; Non linear phenomenon; Metal-insulator-metal (MIM); Non volatile memory; resistive RAM; Integrated circuit; Electrical conductivity transitions; Tunnel diode; selector; one-selector one-resistor (1S1R) cell; Non linear effect; Resistor; ns range; On off effect

We report on a novel high-performance metal-insulator-metal tunnel diode, with ultrathin atomic layer deposited Ta 2 O 5 , for bidirectional selector applications in resistive switching memory. The diode exhibits high drive current of over 10 5 A/cm 2 , high nonlinearity, and fast turn-on and turn-o...