High-Performance Metal-Insulator-Metal Tunnel Diode Selectors
We report on a novel high-performance metal-insulator-metal tunnel diode, with ultrathin atomic layer deposited Ta 2 O 5 , for bidirectional selector applications in resistive switching memory. The diode exhibits high drive current of over 10 5 A/cm 2 , high nonlinearity, and fast turn-on and turn-o...
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Published in | IEEE electron device letters Vol. 35; no. 1; pp. 63 - 65 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.01.2014
Institute of Electrical and Electronics Engineers |
Subjects | |
Online Access | Get full text |
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Summary: | We report on a novel high-performance metal-insulator-metal tunnel diode, with ultrathin atomic layer deposited Ta 2 O 5 , for bidirectional selector applications in resistive switching memory. The diode exhibits high drive current of over 10 5 A/cm 2 , high nonlinearity, and fast turn-on and turn-off times in the below-ns range. A very good uniformity for structures down to 40 nm size and excellent ac endurance is demonstrated, well exceeding the stand-alone nonvolatile memory requirements. |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2013.2291911 |