Spatially Resolved Photoelectric Performance of Axial GaAs Nanowire pn-Diodes

The spatially resolved photoelectric response of a single axial GaAs nanowire pn-diode has been investigated with scanning photocurrent and Kelvin probe force microscopy. Optical generation of carriers at the pn-junction has been shown to dominate the photoresponse. A photocurrent of 88 pA, an open...

Full description

Saved in:
Bibliographic Details
Published inNano research Vol. 4; no. 10; pp. 987 - 995
Main Authors Lysov, Andrey, Vinaji, Sasa, Offer, Matthias, Gutsche, Christoph, Regolin, Ingo, Mertin, Wolfgang, Geller, Martin, Prost, Werner, Bacher, Gerd, Tegude, Franz-Josef
Format Journal Article
LanguageEnglish
Published Heidelberg Tsinghua Press 01.10.2011
Springer Nature B.V
Subjects
Atomic/Molecular Structure and Spectra
Bias
Biomedicine
Biotechnology
Chemistry and Materials Science
Condensed Matter Physics
Diodes
Gallium arsenide
Gallium arsenides
Investigations
Kelvin探针
Materials Science
Microscopy
Nanocomposites
Nanomaterials
Nanostructure
Nanotechnology
Nanowires
Photocurrent
Photoelectric effect
Photoelectricity
Research Article
Semiconductors
Thin films
二极管
光生载流子
光电性能
砷化镓
空间分辨
纳米线
轴向
scanning photocurrent microscopy
solar cells
GaAs
electroluminescence
Kelvin probe force microscopy
nanowire
Online AccessGet full text

Cover

More Information
Summary:The spatially resolved photoelectric response of a single axial GaAs nanowire pn-diode has been investigated with scanning photocurrent and Kelvin probe force microscopy. Optical generation of carriers at the pn-junction has been shown to dominate the photoresponse. A photocurrent of 88 pA, an open circuit voltage of 0.56 V and a fill factor of 69% were obtained under AM 1.5 G conditions. The photocurrent followed the increasing photoexcitation with 0.24 A/W up to an illumination density of at least 90 W/cm2, which is important for potential applications in concentrator solar cells.
Bibliography:GaAs, nanowire, solar cells, scanning photocurrent microscopy, Kelvin probe force microscopy, electroluminescence
11-5974/O4
The spatially resolved photoelectric response of a single axial GaAs nanowire pn-diode has been investigated with scanning photocurrent and Kelvin probe force microscopy. Optical generation of carriers at the pn-junction has been shown to dominate the photoresponse. A photocurrent of 88 pA, an open circuit voltage of 0.56 V and a fill factor of 69% were obtained under AM 1.5 G conditions. The photocurrent followed the increasing photoexcitation with 0.24 A/W up to an illumination density of at least 90 W/cm2, which is important for potential applications in concentrator solar cells.
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ObjectType-Article-2
ObjectType-Feature-1
ISSN:1998-0124
1998-0000
DOI:10.1007/s12274-011-0155-4