An efficient low voltage, high frequency silicon CMOS light emitting device and electro-optical interface

• Published in: IEEE electron device letters Vol. 20; no. 12; pp. 614 - 617
• Main Authors: Snyman, L.W., du Plessis, M., Seevinck, E., Aharoni, H.
• Format: Journal Article
• Language: English
• Published: IEEE 01.12.1999
• Subjects: Breakdown; Centroids; CMOS; CMOS integrated circuits; CMOS process; CMOS technology; Devices; Frequency; Integrated circuit technology; Light emitting; Low voltage; Optical devices; Optical fibers; Process design; Silicon; Stimulated emission; Wavelengths
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/55.806102

A silicon light emitting device was designed and realized utilizing a standard 2-μm industrial CMOS technology design and processing procedure. The device and its associated driving circuitry were integrated in a CMOS integrated circuit and can interface with a multimode optical fiber. The device delivers 8 nW of optical power (450-850 nm wavelength) per 20-μm diameter of chip area at 4.0 V and 5 mA. The device emits light by means of a surface assisted Zener breakdown process that occurs laterally between concentrically arranged highly doped n/sup +/ rings and a p/sup +/ centroid, which are all coplanarly arranged with an optically transparent Si-SiO 2 interface. Theoretical and experimental determinations with capacitances and series resistances indicate that the device has an intrinsic high-frequency operating capability into the near gigahertz range.