Thermal transportation simulation of a susceptor structure with ring groove for the vertical MOCVD reactor

• Published in: Journal of crystal growth Vol. 311; no. 23; pp. 4679 - 4684
• Main Authors: Li, Z.M., Hao, Y., Zhang, J.C., Yang, L.A., Xu, S.R., Chang, Y.M., Bi, Z.W., Zhou, X.W., Ni, J.Y.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.12.2009; Elsevier
• Subjects: A1. Finite element; A1. Heat transfer; A1. Induction; A1. Susceptor; A1. Temperature; A3. MOCVD; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Computer simulation; Cross-disciplinary physics: materials science; rheology; Crystal growth; Exact sciences and technology; Finite element method; Graphite; Grooves; Materials science; Mathematical models; Methods of crystal growth; physics of crystal growth; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Reactors; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation; Transportation; A1. Heat transfer; 07.05.Tp; 02.60.Pn; A1. Finite element; A3. MOCVD; A1. Temperature; A1. Susceptor; A1. Induction; Temperature distribution; Digital simulation; MOCVD; Induction heating; Finite element method; Wafers; Graphite; Growth mechanism; Thermal conductivity; Heat transfer
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2009.09.025

A new susceptor structure with a ring groove on the conventional column-shaped graphite susceptor is proposed for the vertical and induction heating MOCVD reactor, aimed at dividing the inner heat of susceptor into two parts, one of which accumulates on the upside and the other downside of the groove. The shape of the ring groove that changes the directions of heat conduction in the susceptor is optimized and validated by using finite element method (FEM). Compared with the conventional one, the optimized susceptor improves the uniformity of temperature distribution in the wafer and consequently promotes the growth characteristics.