Carrier transport and photodetection in heterojunction photodiodes comprising n-type silicon and p-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite films

Carrier transport and photodetection in heterojunction photodiodes comprising n-type Si substrates and p-type B-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were investigated. Their transport model was discussed mainly on the basis of electrical measu...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 53; no. 5; pp. 50307 - 1-050307-4
Main Authors Ohmagari, Shinya, Hanada, Takanori, Katamune, Y ki, Al-Riyami, Sausan, Yoshitake, Tsuyoshi
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.05.2014
Subjects
Carbon
Carrier transport
Diamonds
Heterojunctions
Illumination
Photodiodes
Silicon substrates
Transport
Transportation
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Summary:Carrier transport and photodetection in heterojunction photodiodes comprising n-type Si substrates and p-type B-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were investigated. Their transport model was discussed mainly on the basis of electrical measurements. It was revealed that an a-C:H matrix in UNCD/a-C:H would predominantly be responsible for carrier transportation in the photodiodes. The photodiodes exhibited high external quantum efficiencies of 72 and 23% under 254 and 365 nm UV illuminations, respectively. These superior responses might be attributable to the photocarrier generation in UNCD grains accompanied by an efficient carrier transport to the a-C:H matrix.
Bibliography:ObjectType-Article-1
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content type line 23
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.53.050307