3D Simple Monte Carlo Statistical Model for GaAs Nanowire Single Photon Avalanche Diode

• Published in: IEEE photonics journal Vol. 12; no. 4; pp. 1 - 8
• Main Authors: Xie, Shiyu, Li, Haochen, Ahmed, Jamal, Huffaker, Diana L.
• Format: Journal Article
• Language: English
• Published: Piscataway IEEE 01.08.2020; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Avalanche diodes; Breakdown; Carrier injection; Computer simulation; Design optimization; Design parameters; Electric fields; Electron avalanche; GaAs; Gallium arsenide; Monte Carlo; Nanowire; Nanowires; P-n junctions; Phonons; Photodiodes; Photon avalanches; Photons; Scattering; Semiconductor process modeling; Single Photon Avalanche Diode; Single-photon avalanche diodes; Solid modeling; Statistical analysis; Statistical models; Three dimensional models; Three-dimensional displays; Timing jitter; Vibration
• ISSN: 1943-0655; 1943-0655; 1943-0647
• DOI: 10.1109/JPHOT.2020.3006957

GaAs based nanowire single photon avalanche diode (SPAD) has been demonstrated with extremely small afterpulsing probability and low dark count rate, and hence it has attracted wide attention for the near infrared applications. However, there is a lack of model to accurately evaluate the avalanche breakdown performance in nanowire SPAD with a spatially non-uniform electric field. In this work, we have developed a three-dimensional (3D) Simple Monte Carlo statistical model for GaAs nanowire SPADs. Model validation includes ionisation coefficients of GaAs and avalanche gain in GaAs nanowire avalanche photodiode. We also apply our model to predict the device performances of breakdown probability, mean time to breakdown and timing jitter, which are essential parameters for SPAD design. Simulating a PN junction GaAs nanowire SPAD design using our model, we found that device performances have little dependence on the primary carrier injection type, but the nanowire doping concentration requires optimization for high performance SPAD design and operation.